The energy level spectrum of gap states in P-doped a-Si: H has been determined using photo-isothermal capacitance transient spectroscopy (ICTS) with sub-bandgap excitation. Photocapadtance transients were observed in the range from the bandgap energy down to 0·5 eV. It has been deduced that two gap-state features exist in the mobility gap; one is 0·5−0·6 eV below the mobility edge (E c) of the conduction band, and the other 1·0−1·2 eV below E c. These results are consistent with our previously reported results on ICTS as well as with defect PL, which were explainedin terms of ‘isolated’ and ‘charge-coupled’ doubly occupied dangling bonds (D−,∗D−).
No takes yet. Share an insight, caveat, or question.
Okushi et al. (1987) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:
More from Philosophical Magazine Letters