The surface core-level shift of the As 3d and the In 4d levels on the (110) cleavage surface of InAs has been measured. The presence of the surface is found to lower the As 3d binding energy by 300±{}20 meV and to increase the In 4d binding energy by 270±{}40 meV relative to the binding energies of the respective bulk levels.
No takes yet. Share an insight, caveat, or question.
Andersen et al. (1990) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: