Using a tunneling Hamiltonian including spin-flip effect, we derive general expressions for spin-polarized tunneling conductances as well as magnetoresistance (MR) in ferromagnetic/ insulator/ferromagnetic junctions. The spin-dependent density of states due to exchange splitting is responsible for the large negative MR, and the spin-flip tunneling is found to diminish the magnitude of MR. Qualitative agreement is obtained between our theoretical results and recent experimental data.
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Gu et al. (1996) studied this question.
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