Y1Ba2Cu3O7-δ thin films were prepared on MgO(001) substrates by rf-magnetron sputtering. The influence of oxygen partial pressure on film preparation has been investigated quantitatively. The oxygen flow rate near the substrate was controlled by an oxygen inlet ring. As-deposited films in an appropriate condition of oxygen flow rate show a superconducting transition at 83 K. When too much oxygen gas is introduced into a chamber, as-deposited films are damaged by resputtering and their superconducting property disappears. The growth mechanism of the thin films is discussed in terms of the resputtering effect.
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Enami et al. (1990) studied this question.
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