We investigated the temperature dependence of the bandgap of untreated and hydrogen-irradiated ZnSe1−xOx (x=0.23%–0.90%) alloys by photoluminescence from T=10 K to room temperature. The variation of the bandgap energy with T is similar to that of ZnSe, and does not depend on the oxygen concentration. This indicates that oxygen incorporation in ZnSe does not lead to the carrier localization observed for nitrogen incorporation in GaAs and GaP. Correspondingly, no interaction between hydrogen and oxygen is observed in hydrogenated ZnSe1−xOx.
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Polimeni et al. (2004) studied this question.
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