Novel fabrication method for nanometer-scale silicon dots and wires

We have discovered that a thin film of SiO2 can be directly reduced to Si under electron beam irradiation. The application of this effect to the fabrication of nanometer-sized Si dots and wires is demonstrated. In particular, if SiO2 is irradiated with a high intensity 100 keV electron beam of nanometer scale, then a column of Si is formed which can be as small as 2 nm in diameter. If the beam is moved in a straight line, then a very thin wire of Si is formed. These columns and wires are formed directly under electron irradiation with a dose of ≥3×109 C m−2 and no resists or chemical development are required.