Hall scattering factors in p-type 4H-SiC with various doping concentrations

The Hall scattering factor (γH) in p-type 4H-SiC with various aluminum doping concentrations of 5.8 × 1014–7.1 × 1018 cm−3 was investigated from 300 to 900 K. γH was determined by comparing the Hall coefficient with the theoretical carrier concentration derived from acceptor and donor concentrations obtained from secondary ion mass spectrometry and capacitance–voltage measurements. γH decreased with increasing temperature or doping concentration; γH = 1–0.4 for the doping concentration of 5.8 × 1014 cm−3 and γH = 0.5–0.2 for the doping concentration of 7.1 × 1018 cm−3. The dependence might be caused by the anisotropic and nonparabolic valence band structure of 4H-SiC.