We have studied the electroreflectance (ER) spectra of n- and p-type 4H–SiC polytype samples from 3 to 6.5 eV. The fundamental band gap and higher lying critical points are measured at room temperature. For this polytype, we observe band-gap narrowing in one of the structures with higher doping concentration.
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Demir et al. (2004) studied this question.
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