Electrical activation of implanted phosphorus ions in [0001]- and [11–20]-oriented 4H-SiC

Aluminum-doped 4H-SiC epilayers with [0001]- or [11–20]-oriented faces were implanted with phosphorus and subsequently annealed in a temperature range of 1550–1700 °C. The electrical activation of phosphorus ions was studied by Hall effect investigations. Identical free electron concentrations are observed at high temperatures in both types of SiC samples indicating that the electrical activation of implanted phosphorus ions is independent of the orientation of the wafers. The compensation generated by the phosphorus implantation is greater in 4H-SiC samples with (0001) face. Phosphorus donor concentrations above 1020 cm−3 could be activated and an extremely low sheet resistance of 29 Ω/□ was determined in the implanted 4H-SiC layer.