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The electroluminescent properties of the Er-doped GaP light-emitting diodes prepared by metalorganic vapor phase epitaxy and diffusion were investigated. Strong characteristic Er3+ intra-4f-shell emission at 0.80 eV is observed over the temperature range of 12–300 K. The electroluminescence intensity is only weakly temperature dependent, decreasing less than 40% as the temperature increases from 20 to 300 K.
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Wang et al. (1994) studied this question.
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