GaN n- and p-type Schottky diodes: Effect of dry etch damage

The reverse breakdown voltage (V/sub B/) and forward turn-on voltage (V/sub F/) of n- and p-GaN Schottky diodes were used to examine the effects of Cl/sub 2//Ar and Ar plasma damage. Even short plasma exposures (4 secs) produced large changes in both V/sub B/ and V/sub F/, with ion mass being a critical factor in determining the magnitude of the changes. The damage depth was established to be 500-600 /spl Aring/ and the damaged material could be removed in boiling NaOH solutions, producing a full recovery of the diode properties. Annealing at 700 to 800/spl deg/C under N/sub 2/ produced only a partial recovery of V/sub B/ and V/sub F/.