Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5 μm

We report on the third-order optical nonlinearity of thee1-e2intersubband transition in GaN-AlN quantum wells and thes-pzintraband transition in GaN-AlN quantum dots, both of them in the spectral region around 1.5 mum. The results in terms of third-order susceptibility, together with the ultrafast nature of the nonlinear response, render these GaN-AlN nanostructures particularly suitable for optical switching and wavelength conversion applications.