A three-dimensional (3D) electron-beam (EB) lithography simulator SEED-3D (system for evaluating electron-beam writing and developing 3D) has been developed for resist profile simulation and analysis of proximity effects. SEED calculates an exposure intensity distribution (EID), a 3D accumulated energy distribution after pattern exposure, and a 3D profile of the developed resist. SEED can take into account proximity effects in a wider region, because SEED takes a short time to calculate the 3D accumulated energy distribution. The concept of the 3D accumulated energy calculation is that the proximity effects in the forward scattering region are estimated precisely, and the proximity effects in the backscattering region are evalulated roughly. This 3D EB lithography simulator allows us to examine resist-pattern profiles of 0.3-μm line and space patterns. This simulator also gives an acceptable value for η which can be used for dose correction.
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Moniwa et al. (1992) studied this question.
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