A novel process has been developed for the fabrication of sub-100 nm T-shaped gates for high performance MESFETs and HEMTs using a bilayer of Shipley UVIII DUV resist and polymethylmethacrylate (PMMA). The process is reliable and gives well defined metallised gates. Ratios of gate cross-section to gate length in excess of 20:1 have been achieved.
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Chen et al. (1999) studied this question.
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