Experimental study demonstrates interface native oxide drives apparent formation critical temperatures in gadolinium disilicide, indicating prior thresholds were artifacts.
GdSi2 was prepared under ultrahigh vacuum conditions. Prior to processing, a clean interface was produced using diluted HF dipping. It is pointed out that the ‘‘critical temperature’’ for formation published earlier is probably an artifact and correlation between the interface native oxide and the critical temperature is established.
No takes yet. Share an insight, caveat, or question.
Suu et al. (1986) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: