Raman and infrared reflection spectroscopies provide us information on electronic properties in polar semiconductors. In the present work, we have employed a dielectric function including the LO phonon damping in addition to the TO phonon damping and free carrier damping, and analyzed observed spectra of n-type 4H–SiC crystals. The carrier density and mobility obtained from the line shape analysis as the best fit parameters are compared with those obtained using the conventional classical dielectric function. It is recognized that the LO phonon damping has a significant effect on the determination of the carrier mobility and density.
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Nakashima et al. (2004) studied this question.
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