Schottky barrier heights of the amorphous interlayer/Si interfaces in titanium thin films on (001)Si

Schottky barrier heights (SBHs) of amorphous interlayer/Si interfaces in Ti thin films on (001)Si have been measured by forward current-voltage technique. A-interlayers were observed to form by cross-sectional transmission electron microscopy in both Ti thin films on n- and p-type silicon systems in samples annealed at temperatures of and lower than 450 °C for 30 s. Although the SBHs vary for about 0.05–0.08 eV for samples annealed over a temperature range from room temperature to 900 °C, SBHs at the a-interlayer/n-Si and a-interlayer/p-Si were measured to be 0.52–0.54 and 0.59–0.57 eV, respectively. Formation of homogeneous metal a-interlayer/Si interfaces correlated with their SBHs in a number of refractory metal-silicon systems promises to greatly clarify the SBH formation mechanisms.