Schottky diodes fabricated from erbium silicide on n-type silicon have been studied to examine their suitability as infrared detectors. The devices were fabricated by thermal evaporation onto <100≳ silicon. The electrical barrier height of 0.28 eV measured by current-voltage and current-voltage-temperature techniques is consistent with that measured by previous workers. The photon barrier height is found to be close to the electrical barrier height. The quantum efficiency at 2.0 μm is found to be 0.52%, comparable to that of unenhanced PtSi, while the dark current is less than 10−7 A cm−2 at 77 K. We conclude that ErSi2 has considerable potential for use in infrared detector arrays.
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Unewisse et al. (1992) studied this question.
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