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A systematic study on the nature and evolution of the postannealing defects in BF+2 -implanted silicon with implantation doses ranging from 5×1014 to 1×1016 cm−2 is reported. The type, nature, size, distribution, and density of the defects were determined by transmission electron microscopy. Formation mechanisms of the microstructural defects are discussed.
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Wu et al. (1985) studied this question.
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