Epitaxial (111)A1/(111)GaAs Schottky contacts are formed using molecular beam epitaxy. The epitaxial relationship is determined by transmission electron microscopy. The interface is found to be abrupt and of an atomic order. Schottky barrier heights are measured by current-voltage and capacitance-voltage methods. The Schottky barrier height for a (111) surface is found to be stable under 450 °C annealing in a N2 atmosphere.
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Ueno et al. (1990) studied this question.
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