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The polycrystalline Sn-doped In2O3 (ITO) films with different Sn concentrations of 0–6.7 wt% (SnO2 wt%) were prepared by postannealing the amorphous ITO films deposited by highly dense plasma-assisted EB evaporation at the low substrate temperature. These films were confirmed to show the high crystallinity and homogeneous Sn distribution by x-ray diffraction (XRD), scanning electron microscopy, and electron spectroscopy for chemical analysis. The detail XRD pattern of 1.9 wt% Sn concentration film showed the doublet peaks, indicating that the film structure was the mixture of two different lattice parameters (LP); one was +0.18% larger and another was −0.13% smaller than the In2O3 LP, which could be attributed to the interstitial and the substitutional Sn atoms, respectively.
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Shigesato et al. (1992) studied this question.
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