High spatial band-gap tuning has been observed from an InGaAs∕GaAs quantum-dot (QD) structure implanted with electrically neutral species, As and P ions, at 200°C followed by a rapid thermal annealing. Phosphorous was found to be a more effective species to induce QD intermixing than the As at similar dose level. A blueshift as large as 126meV has been observed from the P+-implanted and intermixed sample, while only ∼14meV has been measured from the SixNy-capped sample.
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Djie et al. (2005) studied this question.
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