Current-voltage (I–U) curves of the AlGe3N4GaAs strueture are studied depending on the heat treatment conditions. The mechanism of the charge flow through the metal-insulator-semiconductor (MIS) structure is revealed. The contact system parameters (barrier height, contact gap width and its transparency) are determined as well as the energy spectrum of the local states in Ge3N4 which restrict monopolar injection current.
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Bagratishvili et al. (1981) studied this question.
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