The photoluminescence spectra and radiation kinetics for various surface treatments of GaAs crystals were investigated at 20 °K. It is shown that the cleavage of the samples along {110} direction in liquid hydrogen leads as well to the decrease of nonradiative surface recombination as to the appearance of surface radiation. Surface luminescence is also observed for surfaces coated with Si3N4 films.
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Zuev et al. (1973) studied this question.
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