Metal-semiconductor barrier height and semiconductor doping concentration evaluated from room temperature current-voltage and capacitance-voltage data of Schottky barrier diodes exhibit significant error in the presence of an interfacial oxide layer of appreciable thickness (≥50 Å). The effective Richardson constant obtained from an activation energy plot of saturation current is shown to provide a sensitive indication of the presence of the interfacial layer.
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Ashok et al. (1978) studied this question.
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