A transverse domain wall (DW) switchable gate with a very high efficiency is experimentally demonstrated in Permalloy nanowires using a transverse T-shaped structure. DWs are found to either travel undisturbed through the open gate or to be strongly trapped in front of the closed gate only able to travel backwards. The opening and closing of the gate depends on the magnetic configuration of the gate and is controlled using externally applied magnetic fields. Micromagnetic simulations confirm the experimental results.
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Petit et al. (2008) studied this question.
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