For the first time, in situ the hole shape evolution during ultrashort pulse laser drilling in semiconductor material is imaged. The trans-illumination of the sample at a wavelength of 1.06 µm is projected onto a standard CCD camera during the ablation, providing an image of the contour of the ablated structure perpendicular to the irradiation for drilling. This demonstrated technique enables a direct, high resolution investigation of the temporal evolution of the drilling process in the depth of the material without complex sample preparation or post processing.
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Döring et al. (2010) studied this question.
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