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An instrument has been developed for the observation of optical scattering in silicon and in intermetallic compounds. It is considered as a supplementary tool suitable for studying crystal imperfections in conjunction with other optical methods. Scattering patterns of heat‐treated, crucible‐grown silicon crystals have been discussed as examples. The observations are in complete agreement with previously published results obtained by several other investigators on the clustering of oxygen in silicon caused by heat treatment.
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Schwuttke et al. (1958) studied this question.
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