Generation of high-density O2 supermagnetron plasma over lower cathode by radio frequency power supply to upper cathode

The density of supermagnetron plasma generated over a lower cathode, i.e., the wafer stage, was examined qualitatively by optical emission spectroscopy and compared to the results of Ar plasma measured by a similar method. Optical emission intensities (OEIs) of O (or Ar) atoms and O (or Ar) ions over the lower cathode were increased with each rf power. By increasing the upper cathode rf power (UPRF), a remarkable increase of OEI was observed at approximately 180° of the phase difference of two synchronous rf powers supplied to two cathodes, but there was a slight increase observed at approximately 0°. A lot of negative self-bias voltage was observed at about 180°, but there was little positive voltage observed at approximately 0°. The etch rate of the photoresist was increased with UPRF at 150° without increasing the self-bias voltage of the lower cathode. Highly uniform etching of ±5% was obtained in a 5-in.-diam photoresist wafer etching using a stationary magnetic field. 0.4 μm photoresist lines were etched vertically by using an upper cathode covered by a carbon plate.