Tin oxide and indium oxide nanowire transport characteristics: influence of oxygen concentration during synthesis

This study has analyzed the effects of varying oxygen flow rates on the formation of SnO2?and In2O3?nanowires using a vapor?liquid?solid technique and transistor characteristics. SnO2?nanowires grow regardless of the change in the O2?flow rate, whereas In2O3?nanowire formation occurs only for an O2?ratio below 0.2% in argon and transitions to nanoflakes or thin film at higher oxygen fractions. The oxygen fraction in the input gas stream also affects the transistor characteristics when these nanowires are used for device fabrication, particularly the threshold voltage. In2O3?nanowires appear to be more sensitive to O2?compared to SnO2 nanowires in terms of growth and transistor characteristics.