X-ray photoelectron spectroscopy (XPS), chemical state-specific photoelectron diffraction (XPD), and photoelectric polarization-dependent sulfur K-edge x-ray absorption near-edge structure (XANES) have been used to determine the structure of S on GaP(100) surfaces passivated in a (NH4)2S solution. XPS shows that S forms chemical bonds only with Ga. XPD and XANES measurements show that the Ga—S bond is a well-ordered bridge bond in the [011] azimuth.
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Lu et al. (1994) studied this question.
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