High Thermal Stability and Photoluminescence of Si–N‐Codoped BaMgAl 10 O 17 :Eu 2+ Phosphors

The luminance degradation of BaMgAl 10 O 17 :Eu 2+ (BAM) caused by baking at 600°C was studied. The dissolution of Si–N into BAM lattice lead to only a reduction in the lattice parameters. Under UV excitation, the Si–N codoping enhanced the luminescent intensity by a factor of 110% for the as‐received phosphors and by a factor of 122% for phosphors baked at 600°C for 1 h. This could be attributed to the stable local structure surrounding the Eu 2+ ions and the lower electronegativity of nitrogen. The proposed method is expected to be potentially applicable to other aluminate phosphors with higher stability and photoluminescence.