Answers are grounded in this paper and cite their sources.
Hole drift velocities in n-type In0.53Ga0.47As have been determined experimentally for the first time. Measured values of the frequency response of transit-time-limited InGaAs p-i-n photodiodes were fit with the theoretical response using hole velocity as the only free parameter. Measurements over field strengths from 54 to 108 kV/cm showed the drift velocity to be relatively constant at (4.8±0.2) 106 cm/s, indicating that velocity saturation has occurred at field levels below 54 kV/cm.
No takes yet. Share an insight, caveat, or question.
Hill et al. (1987) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: