A high-power semiconductor diode-laser array operating at 797 nm has been used to pump an Er:YLiF(4) upconversion laser with output at 551 nm operating at 48 K. By carefully controlling the beam geometry and oscillating linewidth of the diode-pumped laser, it has been possible to obtain 100 mW of visible output power with a conversion efficiency from the IR to the visible of greater than 5%.
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Stephens et al. (1993) studied this question.
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