Transport Properties of Buried AlGaAs/GaAs Quantum Wires

Buried wires with lateral interfaces consisting of AlGaAs/GaAs heterointerfaces are fabricated using wet etching and regrowth by MOCVD. The critical width of the buried wires was decreased to 0.1 µm, which was less than third of that of as-etched wires. The energy separation of one-dimensional subbands obtained from the Landau plots of Shubnikov-de Haas oscillations for the buried wires was increased to 2.8 meV, which was about two and half times larger than that of the as-etched wire. These results show that the buried quantum wire structure improves electrical transport properties.