The effect of the emitter Al mole fraction and emitter-base junction type on the performance of AlGaAs/GaAs pnp heterojunction transistors was investigated experimentally. A current gain as high as 1360 was obtained for a structure with an Al0.4Ga0.6As emitter and compositionally abrupt emitter-base junction; this was attributed to reduced surface recombination.
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Najjar et al. (1989) studied this question.
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