The quality of the GaAs substrate plays a major role in MESFET performance for devices fabricated by direct ion implantation of silicon atoms into liquid-encapsulated Czochralski (LEC) material. High-energy (270-keV)11B+ implantation was used to improve the silicon impurity distribution near the substrate interface, reduce substrate effects, and produce a more abrupt interface. Since current conduction under low-noise MESFET operation occurs in this region of the channel, microwave performance is improved significantly.
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P.J. McNally (1984) studied this question.
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