An improved pad‐deembedding technique for InGaP/GaAs HBT reducing uncertainty in measurement and equivalent circuit is proposed. Intrinsic elements are obtained by iteratively determining the external and internal base resistance. The extracted equivalent circuits demonstrate good agreement with the measured S‐parameters obtained from 45 MHz to 40 GHz for different sizes of HBTs.
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Ho et al. (2007) studied this question.
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