The molecular beam epitaxial growth of Si-doped GaAs on slightly (1–5°) misoriented (111)A substrates was examined. Occupation sites of Si were greatly affected by the tilted angle, the flux ratio and the substrate temperature. In the growth on an exactly (111)A-oriented substrate at low flux ratio, substantially all Si atoms acted as acceptors. With increase of the tilted angle and/or the flux ratio and with decrease of the substrate temperature, the number of donor site Si atoms increased. A doping mechanism including preferential decomposition of As4 molecules at the steps was proposed.
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Okano et al. (1990) studied this question.