Giant lateral photovoltaic effect observed in TiO2 dusted metal-semiconductor structure of Ti/TiO2/Si

A greatly enhanced lateral photovoltaic effect is observed in superthin TiO2 dusted Ti/TiO2/Si structures. The considerably large sensitivity of 113 mV/mm obtained in this structure is nearly twice as much as the highest record of about 60 mV/mm reported in other structures and constitutes a sharp contrast to that of 32 mV/mm in control sample of Ti/Si. This phenomenon betrays the general understanding that the oxide layer at interface between the metal and semiconductor always deteriorates the formation of lateral photovoltage in metal-semiconductor structure. We ascribe it to the enhancement of interference as electrons tunnel through this superthin TiO2 layer.