Annealing behavior of ion-implanted Fe in InP

The annealing behavior of implanted Fe+ in InP is studied using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM). Dual implants (275 keV, 1.25×1014 cm−2 and 400 keV, 1.25×1014 cm2) were performed at room temperature (RT) and at 200 °C and then annealed at 725 °C for one hour. TEM reveals a 3100-Å amorphous region in the unannealed RT implant. Significant defect production is observed in this sample at the amorphous-crystalline interface following the anneal. SIMS reveals an Fe pileup at this interface. No such pileup is observed in the samples implanted at 200 °C. The data also suggest an Fe diffusion constant which is lower than typically reported in the literature. The results are contrasted with the SIMS study by M. Gauneau, H. L’Haridon, A. Rupert, and M. Salvi [J. Appl. Phys. 53, 6823 (1982)].