Gas Source MBE Growth of High-Quality InP Using Triethylindium and Phosphine

High-quality InP layers have been grown on (100) InP substrates by gas source molecular beam epitaxy using triethyl-indium and phosphine as III and V group sources. The electrical and optical properties of grown InP films are evaluated and compared with those of films grown using red phosphorus as a P source. Epitaxial layers are n-type and the highest achieved 77 K mobility is 24000 cm2/Vs with a carrier concentration of 4.1×1015 cm-3. When phosphine is used instead of red phosphorus as a P source, the compensation ratio (NA/ND) decreases from 0.60–0.98 to 0.29–0.31.