Calculation of the electron spin relaxation times in InSb and InAs by the projection-reduction method

The electron spin relaxation times in a system of electrons interacting with piezoelectric phonons mediated through spin-orbit interactions were calculated using the formula derived from the projection-reduction method. The results showed that the temperature and magnetic field dependence of the relaxation times in InSb and InAs were similar. The piezoelectric material constants obtained by a comparison with the reported experimental result were Ppe=4.0×1022 eV/m for InSb and Ppe=1.2×1023 eV/m for InAs. The result also showed that the relaxation of the electron spin by the Elliot-Yafet process is more relevant for InSb than InAs at a low density.