We investigate the transport behavior of high-energy ballistic electrons in the p-type region using Npn-Al x Ga1- x As/GaAs heterojunction bipolar transistors (HBT) with an abrupt emitter-base heterojunction. The observed electroluminescence spectra from the base region show several high-energy peaks that are associated with ballistic electrons and with LO-phonon emissions. By varying the emitter-collector voltage, the neutral base width can be modulated, leading to a change in spatial electron distributions and thus determining the mean free paths of ballistic electrons.
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Fukai et al. (1995) studied this question.
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