Deformation potential and intervalley scattering: Hot-electron transistor analysis

The coupling constants for the intervalley scattering of electrons by acoustic and optical phonons are calculated based on empirical tight-binding band structures. The calculated intravalley and intervalley scattering rates based on these deformation potentials, polar optical phonon, impurity, and electron-electron interactions successfully explain the observed ratio of collector-to-emitter current as a function of injected electron energy in a GaAs hot-electron transistor.