In this paper, Pt/AlO x /HfO x /TiN bilayer-structure memristors were fabricated by atomic layer deposition. Some essential synaptic biological functions are achieved in such a single inorganic electronic synapse using analog resistive switching behavior. With the aid of x-ray photoelectron spectroscopy (XPS), the non-uniform distribution of oxygen vacancies in the Pt/AlO x /HfO x /TiN memristor has been confirmed. The oxygen-deficient HfO x layer has much more oxygen vacancies than the AlO x layer. In the Pt/AlO x /HfO x /TiN device, the formation/rupture of the nanoscale conductive filaments of oxygen vacancies probably occurs in the AlO x layer. The thickness of the filaments can be altered with the amplitude and width of the stimulating pulses. With the conductive filaments becoming narrower to a quantum wire, quantum conductance has been observed during the bipolar reset process of Pt/AlO x /HfO x /TiN. A memristive switching mechanism of a bilayer metal oxide synaptic device has been proposed to explain synaptic plasticity based on the oxygen vacancies migration/diffusion model.
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Liu et al. (2019) studied this question.
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