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High brightness (2 W with M2=3.4) is demonstrated at 980 nm using a gain-guided tapered GaInAs/(Al)GaAs quantum-dot laser. A remarkable low temperature shift (0.09 nm/K) of the emission wavelength is observed. Moreover, at 20 °C, the emission wavelength is quasiconstant as a function of the injected current.
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Auzanneau et al. (2004) studied this question.
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