A 600-μm-wide by 2200-μm-long broad area single-pass semiconductor amplifier is demonstrated to emit up to 11.6 W of peak power in a nearly diffraction-limited far field pattern when injected with 100 mW from a single-mode laser diode. The amplifier slope efficiency of 0.60 W/A is identical to that obtained using a 100 mW Ti:sapphire master oscillator, and only slightly lower than the slope efficiency of 0.75 W/A measured under fully saturated conditions with 400 mW of Ti:sapphire incident power.
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Mehuys et al. (1993) studied this question.
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