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A tunable external cavity semiconductor laser with > 1 W CW near-diffraction-limited output power between 1030 and 1085 nm is demonstrated. A tapered power amplifier with novel epilayer structure is used as the gain element. Near the gain peak at 1055 nm an output power of 1.6 W CW is obtained.
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Morgott et al. (1998) studied this question.
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