The diffusion potentials in heterojunctions as function of the bulk parameters of semiconductors used and of the density and energy position of interface states are determined. The calculation is made for acceptor- and donor-like states, further the semiinfinite and finite geometries of semiconductors forming the heterojunction are considered. The numerical solution for some interesting cases is shown. [Russian Text Ignored.]
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Jerhot et al. (1976) studied this question.
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